www国产亚洲精品久久麻豆,av在线观看网址,欧美激情高潮无遮挡

TranslationMobile

緩沖層

"buffer" in Chinese : n. 1.〔英俚〕無(wú)能的人，老派人物。 2.家伙，人。 ...
"layer" in Chinese : n. 1.放置者，鋪設(shè)者，計(jì)劃者。 2.【賽馬】(一般) ...
"buffer" in Chinese : n. 1.【機(jī)械工程】緩沖器，緩沖墊；阻尼器，減震器；消聲器。 2.【化學(xué)】 ...
"layer" in Chinese : n. 1.放置者，鋪設(shè)者，計(jì)劃者。 2.【賽馬】(一般)賭客。 3.產(chǎn)卵的雞 ...
"layer by" in Chinese : layer逐層
"layer in" in Chinese : layer層內(nèi)層
"hydraulic buffer oil buffer" in Chinese : 耗能型緩沖器
"layer-for-layer" in Chinese : 疊層繞組
"account buffer" in Chinese : 帳目緩沖器
"accumulator and buffer" in Chinese : 累加器和緩沖器
"acidic buffer" in Chinese : 酸性緩沖液
"address buffer" in Chinese : 地址緩沖器
"air buffer" in Chinese : 空氣緩沖器
"airbag buffer" in Chinese : 水胎磨毛機(jī)
"alkaline buffer" in Chinese : 堿性緩沖液

Examples

Influence of hole buffer layer cupc on properties of organic light - emitting devices
效應(yīng)及氮在其中的作用
The middle class is a buffer layer in the structure of social interests
中間階層是社會(huì)利益結(jié)構(gòu)中的緩沖層。
Adds a buffering layer to read and write operations on another stream
將緩沖層添加到另一個(gè)流上的讀取和寫入操作。
Morphology of low temperature buffer layers and its influence on inp epilayer growth
低溫緩沖層的表面形貌及對(duì)其外延層生長(zhǎng)的影響
Study on transmittance of zno based on transparent thin - film transistor with complex insulative buffer layer of al2o3 aln
附銀二氧化鈦光催化劑的制備及其光催化活性研究
The product is separated from the principle of suction by the absorption layer , a buffer layer , integrated sound insulation layer formed
該產(chǎn)品采用外隔內(nèi)吸的原理，由吸聲層，緩沖層，隔聲層綜合而成。
( 3 ) the effects of growth pressure of buffer layer on the growth of buffer layer and gan epitaxy , and the morphological evolution during high temperature growth have been investigated
( 3 )研究緩沖層生長(zhǎng)壓力對(duì)緩沖層生長(zhǎng)、外延層生長(zhǎng)及形貌變化的影響。
It was found that there exist many nanometer - sized holes on the surface of sin buffer layers , and such porous sin layers probably could enhance the lateral growth
在氮化矽緩沖層表面可以發(fā)現(xiàn)許多奈米尺寸大小的孔洞，其特性相信可提升之后氮化鎵側(cè)向的磊晶成長(zhǎng)。
With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以優(yōu)化的緩沖層生長(zhǎng)條件得到質(zhì)量有明顯改善的gan外延層， gan薄膜的( 0002 )面雙晶dc - xrd掃描的半高寬為6arcmin 。
Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏極電壓條件下,溝道電子易于注入到gan緩沖層中,并被緩沖層中的陷阱所俘獲,耗盡二維電子氣,從而導(dǎo)致電流崩塌效應(yīng)。